# US 2024/0203884 A1 · Semiconductor device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0203884 A1 - Document ID: US20240203884A1 - Status: Published application - Kind: A1 - Application number: 18/532,144 - Filed: 2023-12-07 - Published: 2024-06-20 - Earliest claimed: 2022-12-16 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Hiroshi NOGUCHI - Web page: https://patentgrep.com/patent/US20240203884A1 ## CPC - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10W 20/48: Insulating materials thereof - H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning} - H10W 20/435: {Cross-sectional shapes or dispositions of interconnections} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device according to an embodiment comprises: a first insulating film; a second insulating film provided on the first insulating film; a third insulating film provided on the second insulating film; a first wiring provided in a first groove provided in the first insulating film; and a second wiring provided in a second groove provided in communication with the first insulating film, the second insulating film, and the third insulating film and connected to the first wiring, wherein the second insulating film contains silicon oxynitride, the second insulating film has a processing selectivity higher than processing selectivity of the first insulating film and the third insulating film, and the second insulating film has a dielectric strength voltage higher than a dielectric strength of silicon nitride. ## Claims ### Claim 1 A semiconductor device comprising: a first insulating film; a second insulating film provided on the first insulating film; a third insulating film provided on the second insulating film; a first wiring provided in a first groove provided in the first insulating film; and a second wiring provided in a second groove provided in communication with the first insulating film, the second insulating film, and the third insulating film and connected to the first wiring, wherein the second insulating film contains silicon oxynitride, the second insulating film has a processing selectivity higher than processing selectivity of the first insulating film and the third insulating film, and the second insulating film has a dielectric strength voltage higher than a dielectric strength voltage of silicon nitride. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the first insulating film is a SiO2 film, the second insulating film is a SiOxN1-x film, the third insulating film is a SiO2 film, and x of the SiOxN1-x film is a value in a range of 0.2 or more and 0.41 or less. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein a line width of the second wiring and an interval between adjacent second wirings are in a range of 10 nm or more and 50 nm or less. ### Claim 4 (depends on 2) The semiconductor device according to claim 2, wherein the dielectric strength voltage between the adjacent second wirings is 7 MV/cm or more. ### Claim 5 (depends on 3) The semiconductor device according to claim 3, wherein the dielectric strength voltage between the adjacent second wirings is 7 MV/cm or more. ### Claim 6 A method of manufacturing the semiconductor device comprising: forming a first insulating film; forming a first groove in the first insulating film by selectively etching the first insulating film; forming a first wiring provided in the first groove; forming a second insulating film provided on the first insulating film; forming a third insulating film provided on the second insulating film; forming a second groove provided in communication with the first insulating film, the second insulating film, and the third insulating film and connected to the first wiring, by selectively etching the first insulating film, the second insulating film, and the third insulating film; and forming a second wiring provided in the second groove, wherein the second insulating film contains silicon oxynitride, the second insulating film has a processing selectivity higher than processing selectivity of the first insulating film and the third insulating film, and the second insulating film has a dielectric strength voltage higher than a dielectric strength voltage of silicon nitride. ### Claim 7 (depends on 6) The method of manufacturing the semiconductor device according to claim 6, wherein the first insulating film is a SiO2 film, the second insulating film is a SiOxN1-x film, the third insulating film is a SiO2 film, and x of the SiOxN1-x film is a value in a range of 0.2 or more and 0.41 or less. ### Claim 8 (depends on 7) The method of manufacturing the semiconductor device according to claim 7, wherein a line width of the second wiring and an interval between adjacent second wirings are in a range of 10 nm or more and 50 nm or less. ### Claim 9 (depends on 7) The method of manufacturing the semiconductor device according to claim 7, wherein the dielectric strength voltage between the adjacent second wirings is 7 MV/cm or more. ### Claim 10 (depends on 8) The method of manufacturing the semiconductor device according to claim 8, wherein the dielectric strength voltage between the adjacent second wirings is 7 MV/cm or more.