# US 2024/0203784 A1 · Member for semiconductor manufacturing apparatus

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- Number: US 2024/0203784 A1
- Document ID: US20240203784A1
- Status: Published application
- Kind: A1
- Application number: 18/342,810
- Filed: 2023-06-28
- Published: 2024-06-20
- Earliest claimed: 2022-12-19
- Assignees: NGK Insulators, Ltd.
- Applicants: Ngk Insulators, Ltd.
- Inventors: Hiroya SUGIMOTO
- Web page: https://patentgrep.com/patent/US20240203784A1

## CPC

- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- H10P 72/0421: {for drying etching}
- H10P 72/0432: {mainly by conduction}
- H10P 72/0434: {mainly by convection}
- H10P 72/72: using electrostatic chucks
- H10P 72/7611: {characterised by edge profile or support profile}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A member for semiconductor manufacturing apparatus includes a ceramic plate having a circular wafer placement surface having a seal band along an outer periphery, and an annular focus ring placement surface located outside the wafer placement surface and below the wafer placement surface; a circular inner heater electrode embedded in the ceramic plate; an annular outer heater electrode embedded in the ceramic plate and surrounding the inner heater electrode; and a cooling plate disposed at a surface of the ceramic plate opposite the wafer placement surface, wherein the inner heater electrode overlaps at least a portion of the seal band in plan view, and an outer diameter of the inner heater electrode is not less than 97% of an outer diameter of the wafer placement surface.

## Claims

### Claim 1

A member for semiconductor manufacturing apparatus comprising:
a ceramic plate having
a circular wafer placement surface having a seal band along an outer periphery, and
an annular focus ring placement surface located outside the wafer placement surface and below the wafer placement surface;
a circular inner heater electrode embedded in the ceramic plate;
an annular outer heater electrode embedded in the ceramic plate and surrounding the inner heater electrode; and
a cooling plate disposed at a surface of the ceramic plate opposite the wafer placement surface, wherein
the inner heater electrode overlaps at least a portion of the seal band in plan view, and an outer diameter of the inner heater electrode is not less than 97% of an outer diameter of the wafer placement surface.

### Claim 2 (depends on 1)

The member for semiconductor manufacturing apparatus according to claim 1, wherein the outer diameter of the inner heater electrode is not less than 97% and not more than 103% of the outer diameter of the wafer placement surface.

### Claim 3 (depends on 1)

The member for semiconductor manufacturing apparatus according to claim 1, wherein a distance between an outer circumferential edge of the inner heater electrode and an inner circumferential edge of the outer heater electrode is not less than 2 mm and not more than 18 mm.

### Claim 4 (depends on 1)

The member for semiconductor manufacturing apparatus according to claim 1, further comprising a resin adhesive layer between the ceramic plate and the cooling plate.