# US 2024/0201599 A1 · Method for inspecting resist composition, method for producing resist composition, and resist composition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0201599 A1 - Document ID: US20240201599A1 - Status: Published application - Kind: A1 - Application number: 18/439,390 - Filed: 2024-02-12 - Published: 2024-06-20 - Earliest claimed: 2021-08-13 - Assignees: FUJIFILM Corporation - Applicants: FUJIFILM Corporation - Inventors: Michihiro Shirakawa; Satomi Takahashi; Tetsuya Shimizu; Kei Yamamoto; Naohiro Tango - Web page: https://patentgrep.com/patent/US20240201599A1 ## CPC - G03F 7/325: {Non-aqueous compositions} - G03F 7/004: Photosensitive materials (G03F7/12, G03F7/14 take precedence) - G03F 7/038: Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) - G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) - G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain} - G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) - G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) - G03F 7/32: Liquid compositions therefor, e.g. developers - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract Provided is a method for inspecting a resist composition, the method being able to easily determine a resist composition whose LWR performance after storage for a predetermined period of time is good. Also provided are a method for producing a resist composition and a resist composition. The method for inspecting a resist composition is a method for inspecting a resist composition with which a resist pattern can be formed by performing an exposure treatment and a development treatment using a first developer. The method has a step A1 of forming a resist film on a substrate using the resist composition, a step B1 of exposing the resist film, a step C1 of bringing a second developer that dissolves the resist film at a higher rate than the first developer into contact with the resist film, a step X1 of acquiring specific measurement data, and a step Y1 of determining whether the measurement data falls within a preset allowable range. Alternatively, the method has a step A2 of forming a resist film on a substrate using the resist composition, a step C2 of bringing a second developer into contact with the resist film, a step X2 of acquiring specific measurement data, and a step Y2 of determining whether the measurement data falls within a preset allowable range. ## Claims ### Claim 1 A method for inspecting a resist composition with which a resist pattern can be formed by performing an exposure treatment and a development treatment using a first developer, the method comprising: a step A1 of forming a resist film on a substrate using the resist composition; a step B1 of exposing the resist film formed in the step A1; a step C1 of bringing a second developer different from the first developer into contact with the resist film exposed in the step B1; a step X1 of acquiring at least one measurement data selected from the group consisting of a line width of a resist pattern formed in the step C1, a number of defects of the resist pattern formed in the step C1, and a rate at which the exposed resist film is dissolved by the second developer, the rate being measured in the step C1; and a step Y1 of determining whether the measurement data acquired in the step X1 falls within a preset allowable range, wherein the rate at which the resist film formed using the resist composition is dissolved by the second developer is higher than a rate at which the resist film formed using the resist composition is dissolved by the first developer. ### Claim 2 (depends on 1) The method for inspecting a resist composition according to claim 1, wherein the first developer includes butyl acetate and a hydrocarbon solvent. ### Claim 3 (depends on 2) The method for inspecting a resist composition according to claim 2, wherein the hydrocarbon solvent is undecane. ### Claim 4 (depends on 1) The method for inspecting a resist composition according to claim 1, wherein the second developer includes substantially only butyl acetate. ### Claim 5 (depends on 1) The method for inspecting a resist composition according to claim 1, wherein in the step B1, the resist film is exposed using at least one selected from the group consisting of EUV exposure, KrF exposure, ArF exposure, and EB exposure. ### Claim 6 (depends on 1) The method for inspecting a resist composition according to claim 1, wherein a ratio of the rate at which the resist film formed using the resist composition is dissolved by the second developer to the rate at which the resist film formed using the resist composition is dissolved by the first developer is more than 1.0 and 100 or less. ### Claim 7 A method for inspecting a resist composition with which a resist pattern can be formed by performing an exposure treatment and a development treatment using a first developer, the method comprising: a step A2 of forming a resist film on a substrate using the resist composition; a step C2 of bringing a second developer different from the first developer into contact with the resist film formed in the step A2; a step X2 of acquiring at least one measurement data selected from the group consisting of a number of defects on a surface of the substrate from which the resist film has been removed as a result of the step C2 and a rate at which the resist film is dissolved by the second developer, the rate being measured in the step C2; and a step Y2 of determining whether the measurement data acquired in the step X2 falls within a preset allowable range, wherein the rate at which the resist film formed using the resist composition is dissolved by the second developer is higher than a rate at which the resist film formed using the resist composition is dissolved by the first developer. ### Claim 8 (depends on 7) The method for inspecting a resist composition according to claim 7, wherein the first developer includes butyl acetate and a hydrocarbon solvent. ### Claim 9 (depends on 8) The method for inspecting a resist composition according to claim 8, wherein the hydrocarbon solvent is undecane. ### Claim 10 (depends on 7) The method for inspecting a resist composition according to claim 7, wherein the second developer includes substantially only butyl acetate. ### Claim 11 (depends on 7) The method for inspecting a resist composition according to claim 7, wherein a ratio of the rate at which the resist film formed using the resist composition is dissolved by the second developer to the rate at which the resist film formed using the resist composition is dissolved by the first developer is more than 1.0 and 100 or less. ### Claim 12 (depends on 1) The method for inspecting a resist composition according to claim 1, wherein the resist composition is a resist composition with which a resist pattern can be formed through an exposure treatment including EUV exposure and a development treatment using the first developer. ### Claim 13 (depends on 1) The method for inspecting a resist composition according to claim 1, wherein the resist composition includes a resin having a repeating unit having an aromatic hydrocarbon group. ### Claim 14 (depends on 1) A method for producing a resist composition, the method comprising: a composition preparation step of preparing a resist composition; and an inspection step of inspecting the resist composition prepared in the composition preparation step in accordance with the method according to claim 1. ### Claim 15 (depends on 1) A resist composition produced by a production method having an inspection step of performing inspection by the method according to claim 1. ### Claim 16 (depends on 2) The method for inspecting a resist composition according to claim 2, wherein the second developer includes substantially only butyl acetate. ### Claim 17 (depends on 2) The method for inspecting a resist composition according to claim 2, wherein in the step B1, the resist film is exposed using at least one selected from the group consisting of EUV exposure, KrF exposure, ArF exposure, and EB exposure. ### Claim 18 (depends on 2) The method for inspecting a resist composition according to claim 2, wherein a ratio of the rate at which the resist film formed using the resist composition is dissolved by the second developer to the rate at which the resist film formed using the resist composition is dissolved by the first developer is more than 1.0 and 100 or less. ### Claim 19 (depends on 8) The method for inspecting a resist composition according to claim 8, wherein the second developer includes substantially only butyl acetate. ### Claim 20 (depends on 8) The method for inspecting a resist composition according to claim 8, wherein a ratio of the rate at which the resist film formed using the resist composition is dissolved by the second developer to the rate at which the resist film formed using the resist composition is dissolved by the first developer is more than 1.0 and 100 or less.