# US 2024/0201596 A1 · Methods and related systems for depositing EUV sensitive films > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0201596 A1 - Document ID: US20240201596A1 - Status: Published application - Kind: A1 - Application number: 18/528,314 - Filed: 2023-12-04 - Published: 2024-06-20 - Earliest claimed: 2022-12-09 - Assignees: ASM IP Holding B.V. - Applicants: ASM IP Holding B.V. - Inventors: Kishan Ashokbhai Patel; Yoann Tomczak; Charles Dezelah; Ivan Zyulkov; David Kurt De Roest; Michael Givens; Daniele Piumi - Web page: https://patentgrep.com/patent/US20240201596A1 ## CPC - G03F 7/167: {from the gas phase, by plasma deposition (G03F7/2035 takes precedence)} - G03F 7/0042: {with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence)} - G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors} - G03F 7/165: {Monolayers, e.g. Langmuir-Blodgett} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound. ## Claims ### Claim 1 A method for forming an extreme ultraviolet (EUV) sensitive film on a substrate by a cyclic deposition process, the method comprising: providing a substrate in a reactor chamber; and executing a cyclical deposition process, the cyclical deposition process comprising the following steps i-ii: i. providing a metal precursor into the reactor chamber in vapor phase; and ii. providing a heterocyclic organic precursor into the reactor chamber in vapor phase; to form a EUV sensitive film on a substrate. ### Claim 2 (depends on 1) The method according to claim 1, wherein the deposition process is molecular layer deposition. ### Claim 3 (depends on 1) The method according to claim 1, wherein the organic ring in the heterocyclic organic precursor is selected from the group consisting of cyclic carboxylic acid anhydride, cyclic carbonate, and cyclic azasilane. ### Claim 4 (depends on 1) The method according to claim 1, wherein the heterocyclic organic precursor comprises a carbon-carbon double bond or carbon-carbon single bond in the ring. ### Claim 5 (depends on 1) The method according to claim 1, wherein the heterocyclic organic precursor comprises maleic anhydride. ### Claim 6 (depends on 1) The method according to claim 1, wherein the metal precursor comprises a metal atom selected from the group consisting of Sn, Ti, Zn, Zr, Sb, Te, Ge, Al, and Hf. ### Claim 7 (depends on 1) The method according to claim 1, wherein the metal precursor comprises at least one ligand selected from the group consisting of halide, alkyl, alkoxide, alkylamido, and amidinate. ### Claim 8 (depends on 1) The method according to claim 1, wherein the process further comprises providing a coreactant into the reactor chamber in vapor phase. ### Claim 9 (depends on 8) The method according to claim 8, wherein the coreactant is chosen from the group consisting of water, ammonia, homobifunctional organic molecule, and heterobifunctional organic molecule. ### Claim 10 (depends on 9) The method according to claim 9, wherein the homobifunctional organic molecule and the heterobifunctional organic molecule comprise at least one molecule selected from the group consisting of alcohol, amine, thiol, carboxylic acid, and carboxylic acid halide. ### Claim 11 (depends on 9) The method according to claim 9, wherein the two functional groups in the homobifunctional organic molecule and heterobifunctional organic molecule are connected by an alkyl chain consisting of 1-8 carbon atoms. ### Claim 12 (depends on 9) The method according to claim 9, wherein the two functional groups in the homobifunctional organic molecule and heterobifunctional organic molecule are attached to a benzene ring. ### Claim 13 (depends on 9) The method according to claim 9, wherein the two functional groups in the homobifunctional organic molecule and heterobifunctional organic molecule are attached to separate carbon atoms on a cycloalkane comprising from 3 to 8 carbon atoms. ### Claim 14 (depends on 1) The method according to claim 1, wherein a pulse time of the metal precursor is 0.05 to 10 sec. ### Claim 15 (depends on 1) The method according to claim 1, wherein a purge time of the metal precursor is 0.1 to 120 sec. ### Claim 16 (depends on 1) The method according to claim 1 wherein a pulse time of the heterocyclic organic precursor is 0.1 to 30 sec. ### Claim 17 (depends on 1) The method according to claim 1, wherein a pulse time of the heterocyclic organic precursor is 1 to 240 sec. ### Claim 18 (depends on 1) The method according to claim 1, wherein the deposition pressure in the cyclical deposition process is 0.1 torr to 50 torr. ### Claim 19 (depends on 1) The method according to claim 1, wherein the deposition temperature in the cyclical deposition process is between 50 to 200° ° C. ### Claim 20 (depends on 1) A system comprising: one or more reaction chambers constructed to hold a substrate; a metal precursor vessel constructed and arranged to contain and evaporate a metal precursor; a ring containing organic precursor vessel constructed and arranged to contain and evaporate a ring containing organic precursor; and a controller, wherein the controller is configured to control gas flow of the metal precursor and the ring containing organic precursor into the one or more reaction chambers to form a film on a substrate comprised in the reaction chamber by the method according to claim 1.