# US 2024/0201593 A1 · Composition for forming silicon-containing resist underlayer film

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- Number: US 2024/0201593 A1
- Document ID: US20240201593A1
- Status: Published application
- Kind: A1
- Application number: 18/284,994
- Filed: 2022-03-30
- Published: 2024-06-20
- Earliest claimed: 2021-03-31
- Assignees: Nissan Chemical Corporation
- Applicants: Nissan Chemical Corporation
- Inventors: Satoshi TAKEDA; Wataru SHIBAYAMA; Shuhei SHIGAKI; Kodai KATO
- Web page: https://patentgrep.com/patent/US20240201593A1

## CPC

- G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)}
- C08G 77/14: containing silicon bound to oxygen-containing groups
- C09D 183/04: Polysiloxanes
- C09D 183/06: containing silicon bound to oxygen-containing groups (C09D183/12 takes precedence)
- G03F 7/0752: {in non photosensitive layers or as additives, e.g. for dry lithography}
- G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00)
- G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence)
- H10P 76/2041: {Photolithographic processes}
- C08G 77/80: {Siloxanes having aromatic substituents, e.g. phenyl side groups}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A composition forms a silicon-containing underlayer film, the composition being for forming a silicon-containing resist underlayer film that enables formation of a good resist pattern without pattern collapse even when having a thinner thickness compared to conventional products, such as a thickness of 10 nm or less. The composition for forming a silicon-containing underlayer film contains: [A] a polysiloxane having a weight average molecular weight of 1,800 or less as determined by gel permeation chromatography (GPC) analysis in terms of polystyrene, and the amount of a component having a molecular weight of more than 2,500 is less than 20% in an integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene; and [B] a solvent.

## Claims

### Claim 1

A silicon-containing resist underlayer film-forming composition comprising:
[A] a polysiloxane having a weight average molecular weight of 1,800 or less as determined by gel permeation chromatography (GPC) analysis in terms of polystyrene wherein the amount of a component having a molecular weight of more than 2,500 is less than 20% in an integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene; and
[B] a solvent.

### Claim 2 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein, in the polysiloxane [A], the amount of a component having a molecular weight of more than 2,000 is less than 35% in the integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene.

### Claim 3 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the polysiloxane [A] has a weight average molecular weight of 1,100 to 1,800.

### Claim 4 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition is such that a pattern can be formed even when a resist underlayer film formed from the composition has a thickness of 10 nm or less.

### Claim 5 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the polysiloxane [A] contains at least one selected from the group consisting of a hydrolysis condensate of a hydrolyzable silane containing at least one hydrolyzable silane of the following Formula (1):
R1aSi(R2)4−a (1)
(wherein R1 is a group bonded to the silicon atom, and is each independently a substitutable alkyl group, a substitutable aryl group, a substitutable aralkyl group, a substitutable halogenated alkyl group, a substitutable halogenated aryl group, a substitutable halogenated aralkyl group, a substitutable alkoxyalkyl group, a substitutable alkoxyaryl group, a substitutable alkoxyaralkyl group, or a substitutable alkenyl group, or an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or any combination of these; R2 is a group or atom bonded to the silicon atom, and is each independently an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom; and a is an integer of 0 to 3), a modified hydrolysis condensate prepared by modification of at least some of silanol groups of the condensate of the hydrolyzable silane with an alcohol, a modified hydrolysis condensate prepared by protection of at least some of silanol groups of the condensate of the hydrolyzable silane with an acetal, and a product prepared by dehydration reaction between the condensate of the hydrolyzable silane and an alcohol.

### Claim 6 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition comprises no curing catalyst.

### Claim 7 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the solvent [B] contains water.

### Claim 8 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition further comprises a pH adjuster.

### Claim 9 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition comprises [C] a glycol compound having a normal boiling point of 230.0° C. or higher and being of the following Formula (2):
(wherein R3 and R4 are each independently a hydrogen atom, a C1-4 alkyl group, or a C3-4 acyl group; and n is an integer of 3 or more).

### Claim 10 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition further comprises a surfactant.

### Claim 11 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition further comprises a metal oxide.

### Claim 12 (depends on 1)

The silicon-containing resist underlayer film-forming composition according to claim 1, wherein the composition is used for formation of a resist underlayer film for EUV lithography.

### Claim 13 (depends on 1)

A resist underlayer film, which is a cured product of the silicon-containing resist underlayer film-forming composition according to claim 1.

### Claim 14 (depends on 13)

The resist underlayer film according to claim 13, wherein the resist underlayer film has a thickness of 10 nm or less.

### Claim 15 (depends on 13)

A semiconductor processing substrate comprising a semiconductor substrate and the resist underlayer film according to claim 13.

### Claim 16 (depends on 1)

A semiconductor device production method comprising:
a step of forming an organic underlayer film on a substrate;
a step of forming, on the organic underlayer film, a silicon-containing resist underlayer film from the silicon-containing resist underlayer film-forming composition according to claim 1; and
a step of forming a resist film on the silicon-containing resist underlayer film.

### Claim 17 (depends on 16)

The production method according to claim 16, wherein the step of forming a silicon-containing resist underlayer film involves the use of the silicon-containing resist underlayer film-forming composition subjected to filtration with a nylon filter.

### Claim 18 (depends on 1)

A resist underlayer film formed by applying, onto a semiconductor substrate, the silicon-containing resist underlayer film-forming composition according to claim 1, and baking the composition.

### Claim 19 (depends on 1)

A semiconductor apparatus production method comprising a step of applying, onto a semiconductor substrate, the silicon-containing resist underlayer film-forming composition according to claim 1, and baking the composition, to thereby form a resist underlayer film; a step of applying a resist film-forming composition onto the underlayer film, to thereby form a resist film; a step of exposing the resist film to light; a step of developing the resist after the light exposure, to thereby form a resist pattern; a step of etching the resist underlayer film with the resist pattern; and a step of processing the semiconductor substrate with the patterned resist underlayer film.

### Claim 20 (depends on 1)

A semiconductor apparatus production method comprising a step of forming an organic underlayer film on a semiconductor substrate; a step of applying, onto the organic underlayer film, the resist underlayer film-forming composition according to claim 1, and baking the composition, to thereby form a resist underlayer film; a step of applying a resist film-forming composition onto the resist underlayer film, to thereby form a resist film; a step of exposing the resist film to light; a step of developing the resist after the light exposure, to thereby form a resist pattern; a step of etching the resist underlayer film with the resist pattern; a step of etching the organic underlayer film with the patterned resist underlayer film; and a step of processing the semiconductor substrate with the patterned organic underlayer film.