# US 2024/0201582 A1 · Pattern formation method and replica template

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- Number: US 2024/0201582 A1
- Document ID: US20240201582A1
- Status: Published application
- Kind: A1
- Application number: 18/460,920
- Filed: 2023-09-05
- Published: 2024-06-20
- Earliest claimed: 2022-12-14
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Ryo KOBAYASHI
- Web page: https://patentgrep.com/patent/US20240201582A1

## CPC

- G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
- B29C 59/02: by mechanical means, e.g. pressing {(B29C59/007 takes precedence; embossing expanded porous articles B29C44/5627)}
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10P 76/00: Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00)
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A pattern formation method includes forming a hard mask layer on a first surface of a first substrate; exposing a second region of the first surface, with a first region of the first surface covered by the hard mask layer; forming a resist mask layer on the hard mask layer and on the second region; molding the resist mask layer by pressing a template against the resist mask layer; curing the resist mask layer; and forming a first recessed portion recessed below the first surface and a first protruding portion protruding beyond a bottom face of the first recessed portion.

## Claims

### Claim 1

A pattern formation method, comprising:
forming a hard mask layer on a first surface of a first substrate;
exposing a second region of the first surface, with a first region of the first surface covered by the hard mask layer;
forming a resist mask layer on the hard mask layer and on the second region;
molding the resist mask layer by pressing a template against the resist mask layer;
curing the resist mask layer; and
forming a first recessed portion recessed below the first surface and a first protruding portion protruding beyond a bottom face of the first recessed portion.

### Claim 2 (depends on 1)

The pattern formation method according to claim 1, wherein the first recessed portion and the first protruding portion form a pattern of a replica template configured for nanoimprint lithography.

### Claim 3 (depends on 1)

The pattern formation method according to claim 1, further comprising:
forming the first recessed portion and a multiple of the first protruding portions having differing heights by partially etching the second region using the hard mask layer and the resist mask layer.

### Claim 4

An apparatus for forming a pattern, comprising:
a replica template including a first substrate; and
a master template including a second substrate;
wherein the first substrate has a first surface, a first recessed portion recessed below the first surface, and a first protruding portion protruding beyond a bottom face of the first recessed portion,
wherein the second substrate has a second surface and a second recessed portion recessed below the second surface,
wherein the first protruding portion has a form that is an inversion of the second recessed portion, and
wherein the second substrate does not have a protruding portion that has a form that is an inversion of the first recessed portion.

### Claim 5 (depends on 4)

The replica template according to claim 4, wherein the first substrate has a multiple of the first protruding portions having different heights.

### Claim 6 (depends on 1)

The pattern formation method according to claim 1, wherein the step of exposing a second region of the first surface further comprises partially etching the hard mask layer.

### Claim 7 (depends on 1)

The pattern formation method according to claim 1, wherein the step of forming a first recessed portion recessed below the first surface and a first protruding portion protruding beyond a bottom face of the first recessed portion further comprises partially etching the second region using the hard mask layer and the resist mask layer.