# US 2024/0201548 A1 · Liquid crystal display device and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0201548 A1 - Document ID: US20240201548A1 - Status: Published application - Kind: A1 - Application number: 18/397,437 - Filed: 2023-12-27 - Published: 2024-06-20 - Earliest claimed: 2006-10-31 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Hajime Kimura - Web page: https://patentgrep.com/patent/US20240201548A1 ## CPC - G02F 1/136286: {Wiring, e.g. gate line, drain line} - G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)} - G02F 1/1337: Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers - G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]} - G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} - G02F 1/136277: {formed on a semiconductor substrate, e.g. of silicon} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - G09G 3/20: for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix {no fixed position being assigned to or needed to be assigned to the individual characters or partial characters} - G09G 3/3659: {the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes} - H04N 9/3102: {using two-dimensional electronic spatial light modulators (micromechanical modulators as such G02B26/0833; liquid crystal modulators as such G02F1/13)} - H10D 86/40: characterised by multiple TFTs - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/133553: {Reflecting elements (associated to illuminating devices G02F1/133605)} - G02F 1/134372: {for fringe field switching [FFS] where the common electrode is not patterned} - G02F 1/136231: {for reducing the number of lithographic steps} - G09G 3/342: {using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines} - G09G 3/3685: {Details of drivers for data electrodes} - G09G 2300/0876: Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes - G09G 2310/0235: Field-sequential colour display - G09G 2310/024: Scrolling of light from the illumination source over the display in combination with the scanning of the display screen - G09G 2310/027: Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters - G09G 2310/0275: Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current - G09G 2310/0297: Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns - G09G 2320/0233: Improving the luminance or brightness uniformity across the screen - G09G 2320/0252: Improving the response speed - G09G 2320/0261: in the context of movement of objects on the screen or movement of the observer relative to the screen - G09G 2320/106: Determination of movement vectors or equivalent parameters within the image - G09G 2340/0435: Change or adaptation of the frame rate of the video stream - G09G 2340/16: Determination of a pixel data signal depending on the signal applied in the previous frame - G09G 2352/00: Parallel handling of streams of display data - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode. ## Claims ### Claim 1 (canceled) ### Claim 2 A semiconductor device having a pixel portion comprising a plurality of pixels, the pixel portion comprising: a common electrode over a first substrate; a first conductive layer over the first substrate, the first conductive layer directly connected to the common electrode; a transistor over the first substrate, the transistor having a semiconductor layer comprising polycrystalline silicon; a gate wiring, a part of the gate wiring being configured to be a gate electrode of the transistor; a source wiring, a part of the source wiring being configured to be one of a source electrode and a drain electrode of the transistor; a second conductive layer over and in contact with the semiconductor layer; an insulating film over the common electrode, the first conductive layer, and the second conductive layer; a pixel electrode over the insulating film, the pixel electrode directly connected to the second conductive layer; and a liquid crystal layer over the common electrode and the pixel electrode, wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material, wherein the pixel electrode has a plurality of slits, wherein the gate electrode is provided over the semiconductor layer, wherein the gate electrode and a first region of the common electrode overlap with each other, wherein the one of the source electrode and the drain electrode is provided over and in contact with the semiconductor layer, and wherein the one of the source electrode and the drain electrode and a second region of the common electrode and overlap with each other. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the gate wiring comprises molybdenum. ### Claim 4 (depends on 2) The semiconductor device according to claim 2, wherein the insulating film comprises silicon nitride. ### Claim 5 (depends on 2) The semiconductor device according to claim 2, wherein each of the first conductive layer, the source wiring, and the second conductive layer has a stacked-layer structure comprising a layer containing aluminum interposed between layers containing one of molybdenum and titanium. ### Claim 6 (depends on 2) The semiconductor device according to claim 2, further comprising: a color filter over the liquid crystal layer; and a second substrate over the color filter. ### Claim 7 (depends on 2) The semiconductor device according to claim 2, wherein the common electrode is provided across the plurality of pixels of the pixel portion. ### Claim 8 A semiconductor device having a pixel portion comprising a plurality of pixels, the pixel portion comprising: a common electrode over a first substrate; a first conductive layer over the first substrate, the first conductive layer directly connected to the common electrode; a transistor over the first substrate, the transistor having a semiconductor layer comprising polycrystalline silicon; a gate wiring, a part of the gate wiring being configured to be a gate electrode of the transistor; a source wiring, a part of the source wiring being configured to be one of a source electrode and a drain electrode of the transistor; a second conductive layer over and in contact with the semiconductor layer; an insulating film over the common electrode, the first conductive layer, and the second conductive layer; a pixel electrode over the insulating film, the pixel electrode directly connected to the second conductive layer; and a liquid crystal layer over the common electrode and the pixel electrode, wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material, wherein the pixel electrode has a plurality of slits, wherein the gate electrode is provided over the semiconductor layer, wherein the gate electrode and a first region of the common electrode overlap with each other, wherein the one of the source electrode and the drain electrode is provided over and in contact with the semiconductor layer, wherein the one of the source electrode and the drain electrode and a second region of the common electrode and overlap with each other, and wherein the pixel electrode and a third region of the common electrode overlap with each other. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the gate wiring comprises molybdenum. ### Claim 10 (depends on 8) The semiconductor device according to claim 8, wherein the insulating film comprises silicon nitride. ### Claim 11 (depends on 8) The semiconductor device according to claim 8, wherein each of the first conductive layer, the source wiring, and the second conductive layer has a stacked-layer structure comprising a layer containing aluminum interposed between layers containing one of molybdenum and titanium. ### Claim 12 (depends on 8) The semiconductor device according to claim 8, further comprising: a color filter over the liquid crystal layer; and a second substrate over the color filter. ### Claim 13 (depends on 8) The semiconductor device according to claim 8, wherein the common electrode is provided across the plurality of pixels of the pixel portion. ### Claim 14 A semiconductor device having a pixel portion comprising a plurality of pixels, the pixel portion comprising: a common electrode over a first substrate; a first conductive layer over the first substrate, the first conductive layer directly connected to the common electrode; a transistor over the first substrate, the transistor having a semiconductor layer comprising polycrystalline silicon; a gate wiring, a part of the gate wiring being configured to be a gate electrode of the transistor; a source wiring, a part of the source wiring being configured to be one of a source electrode and a drain electrode of the transistor; a second conductive layer over and in contact with the semiconductor layer; an insulating film over the common electrode, the first conductive layer, and the second conductive layer; a pixel electrode over the insulating film, the pixel electrode directly connected to the second conductive layer; and a liquid crystal layer over the common electrode and the pixel electrode, wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material, wherein the pixel electrode has a plurality of slits, wherein the gate electrode is provided over the semiconductor layer, wherein the gate electrode and a first region of the common electrode overlap with each other, wherein the one of the source electrode and the drain electrode is provided over and in contact with the semiconductor layer, wherein the one of the source electrode and the drain electrode and a second region of the common electrode and overlap with each other, and wherein each of the common electrode and the pixel electrode comprises a light-transmitting conductive layer. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein each of the common electrode and the pixel electrode comprises indium tin oxide. ### Claim 16 (depends on 14) The semiconductor device according to claim 14, wherein the gate wiring comprises molybdenum. ### Claim 17 (depends on 14) The semiconductor device according to claim 14, wherein the insulating film comprises silicon nitride. ### Claim 18 (depends on 14) The semiconductor device according to claim 14, wherein each of the first conductive layer, the source wiring, and the second conductive layer has a stacked-layer structure comprising a layer containing aluminum interposed between layers containing one of molybdenum and titanium. ### Claim 19 (depends on 14) The semiconductor device according to claim 14, further comprising: a color filter over the liquid crystal layer; and a second substrate over the color filter. ### Claim 20 (depends on 14) The semiconductor device according to claim 14, wherein the common electrode is provided across the plurality of pixels of the pixel portion.