# US 2024/0201126 A1 · Methods and apparatus for measuring analytes

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- Number: US 2024/0201126 A1
- Document ID: US20240201126A1
- Status: Published application
- Kind: A1
- Application number: 18/536,131
- Filed: 2023-12-11
- Published: 2024-06-20
- Earliest claimed: 2008-10-22
- Assignees: Life Technologies Corporation
- Applicants: Life Technologies Corporation
- Inventors: James BUSTILLO; Mark J. MILGREW; Wolfgang HINZ; John LEAMON; John DAVIDSON; Martin HUBER; Antoine M. VAN OIJEN; Jonathan ROTHBERG
- Web page: https://patentgrep.com/patent/US20240201126A1

## CPC

- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- C12Q 1/6869: Methods for sequencing
- C12Q 1/6874: involving nucleic acid arrays, e.g. sequencing by hybridisation
- G01N 27/4148: {Integrated circuits therefor, e.g. fabricated by CMOS processing}
- H10D 84/01: Manufacture or treatment
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- C12Q: MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS (immunoassay G01N33/53); COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, comprising:
forming an array of chemically-sensitive field effect transistors (chemFETs), each chemFET in the array having a floating gate structure including a sensing surface formed on a top metal layer of the floating gate structure;
depositing a dielectric layer over the sensing surfaces of the floating gate structures of the chemFETs in the array;
etching the dielectric layer to define an array of reaction chambers; each reaction chamber exposing a corresponding sensing surface of a floating gate structure; and
depositing a layer of sensing material within the array of reaction chambers and at least partially on each reaction chamber sidewall to define an array of reaction chambers where each reaction chamber includes a sensing layer in contact with a sensing surface of a floating gate structure.