Memory device with laterally formed memory cells
AssigneeMicron Technology, Inc.
InventorsThomas M. Graettinger, Lorenzo Fratin, Patrick M. Flynn, Enrico Varesi, Paolo Fantini
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AssigneeMicron Technology, Inc.
InventorsThomas M. Graettinger, Lorenzo Fratin, Patrick M. Flynn, Enrico Varesi, Paolo Fantini
Estimating the term…
Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.
(canceled)
An apparatus, comprising:
An apparatus, comprising:
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Dependencies are inferred from the claim text.