Stress-resistant trace structure and piezoelectric detection device made thereof
AssigneesInterface Technology (ChengDu) Co., Ltd., Interface Optoelectronics (Shenzhen) Co., Ltd., General Interface Solution Limited
InventorsBO-JHANG SUN, CHIH-CHIN KO, HSIN-YU CHEN, JI-AN CHEN
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Abstract
Disclosed is a stress-resistant trace structure and a piezoelectric detection device made thereof. The stress-resistant trace structure includes a patterned trace layer and a porous anti-stress layer. The patterned trace layer has a non-linear pattern and is configured on the porous anti-stress layer. Specifically, the porous anti-stress layer has a plurality of through holes, and the through holes are vertically interlaced with the non-linear pattern.
Claims20
A stress-resistant trace structure comprising:
- a porous anti-stress layer having a plurality of through holes;
- a patterned trace layer having a non-linear pattern and being configured on the porous anti-stress layer, wherein the through holes of the porous anti-stress layer are vertically interlaced with the non-linear pattern of the patterned trace layer.
A piezoelectric detection device, comprising:
- a flexible piezoelectric material layer sandwiched between two adjacent porous deposition layers;
- a plurality of passivation layers respectively disposed adjacent to each porous deposition layer and away from the flexible piezoelectric material layer;
- and
- a plurality of patterned electrode trace layers, each being respectively sandwiched between each passivation layer and each porous deposition layer, wherein each patterned electrode trace layer has a patterned electrode;
- wherein each porous deposition layer has through holes, and the through holes are vertically interlaced with each patterned electrode, so that each patterned electrode prevents from being broken as being bent.
Dependencies are inferred from the claim text.