Display panel, manufacturing method thereof, and display device
AssigneeShenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorsJingyuan Hu, Fanjing Wu
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Abstract
A display panel, a manufacturing method thereof, and a display device are provided. The display panel includes a substrate, an organic planarization layer, an anode, a light-emitting layer, and a cathode arranged in sequence. The anode includes a hydrogen barrier layer, a reflective layer, and an electrode layer arranged in sequence on the organic planarization layer. A reducibility of a metal in the reflective layer is greater than a reducibility of hydrogen. A material of the hydrogen barrier layer is metal or alloy, wherein a reducibility of a metal in the hydrogen barrier layer is less than the reducibility of hydrogen.
Claims20
A display panel, comprising:
- a substrate;
- a metal oxide thin film transistor disposed on the substrate;
- an organic planarization layer disposed on a side of the metal oxide thin film transistor away from the substrate, wherein a through hole is provided in the organic planarization layer;
- an anode disposed on a side of the organic planarization layer away from the metal oxide thin film transistor, wherein the anode covers the through hole, and wherein the anode is connected to the metal oxide thin film transistor;
- a light-emitting layer disposed on a side of the anode away from the organic planarization layer;
- and
- a cathode disposed on a side of the light-emitting layer away from the anode;
- wherein the anode comprises a hydrogen barrier layer, a reflective layer, and an electrode layer sequentially disposed on the organic planarization layer, wherein a reducibility of a metal in the reflective layer is greater than a reducibility of hydrogen, wherein a material of the hydrogen barrier layer is metal or alloy, and wherein a reducibility of a metal in the hydrogen barrier layer is less than the reducibility of hydrogen.
A display device comprising a housing and a display panel disposed in the housing, wherein the display panel comprises:
- a substrate;
- a metal oxide thin film transistor disposed on the substrate;
- an organic planarization layer disposed on a side of the metal oxide thin film transistor away from the substrate, wherein a through hole is provided in the organic planarization layer;
- an anode disposed on a side of the organic planarization layer away from the metal oxide thin film transistor, wherein the anode covers the through hole, and wherein the anode is connected to the metal oxide thin film transistor;
- a light-emitting layer disposed on a side of the anode away from the organic planarization layer;
- and
- a cathode disposed on a side of the light-emitting layer away from the anode;
- wherein the anode comprises a hydrogen barrier layer, a reflective layer, and an electrode layer sequentially disposed on the organic planarization layer, wherein a reducibility of a metal in the reflective layer is greater than a reducibility of hydrogen, wherein a material of the hydrogen barrier layer is metal or alloy, and wherein a reducibility of a metal in the hydrogen barrier layer is less than the reducibility of hydrogen.
A method of manufacturing a display panel, comprising the following steps:
- providing a substrate;
- forming a metal oxide thin film transistor on a side of the substrate;
- forming an organic planarization layer on the metal oxide thin film transistor, wherein a through hole is provided in the organic planarization layer;
- forming a hydrogen barrier base layer, a reflective base layer, and an electrode base layer sequentially on the organic planarization layer;
- wherein a reducibility of a metal in the reflective base layer is greater than a reducibility of hydrogen, wherein a material of the hydrogen barrier base layer is metal or alloy, and wherein a reducibility of a metal in the hydrogen barrier base layer is less than the reducibility of hydrogen;
- annealing the hydrogen barrier base layer, the reflective base layer, and the electrode base layer;
- patterning the hydrogen barrier base layer, the reflective base layer, and the electrode base layer, wherein the hydrogen barrier base layer is formed to a hydrogen barrier layer, the reflective base layer is formed to a reflective layer, and the electrode base layer is formed to an electrode layer, wherein the hydrogen barrier layer, the reflection layer, and the electrode layer constitute an anode, and wherein the anode covers the through hole and is connected to the metal oxide thin film transistor;
- and
- forming a light-emitting layer and a cathode sequentially on the anode sequentially.
Dependencies are inferred from the claim text.