Sensor embedded display panel and electronic device

A sensor-embedded display panel, comprising:

• a light emitting element on a substrate, the light emitting element including a light emitting layer, and
• a sensor on the substrate, the sensor including a photosensitive layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate,
• wherein the light emitting element and the sensor include
• separate, respective portions of a first common auxiliary layer connected to each other to extend continuously under the light emitting layer and the photosensitive layer, the first common auxiliary layer including a hole transport material, and
• separate, respective portions of a second common auxiliary layer connected to each other to extend continuously on the light emitting layer and the photosensitive layer, the second common auxiliary layer including an electron transport material,
• wherein the photosensitive layer includes
• a first semiconductor layer that is proximate to the first common auxiliary layer in relation to the second common auxiliary layer and includes a p-type semiconductor, and
• a second semiconductor layer that is proximate to the second common auxiliary layer in relation to the first common auxiliary layer and includes a non-fullerene n-type semiconductor, a lowest unoccupied molecular orbital (LUMO) energy level of the non-fullerene n-type semiconductor being deeper than a LUMO energy level of the electron transport material,
• wherein the sensor further includes an insertion layer between the second semiconductor layer and the second common auxiliary layer,
• the insertion layer includes a metal, a metal compound, or any combination thereof, and
• a work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than each of the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.