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US 2024/0196624 A1Published application
Method of manufacturing ferroelectric-based 3-dimensional flash memory
AssigneeSamsung Electronics Co., Ltd.
InventorsYunheub SONG, CHANGHWAN CHOI, JAEMIN SIM
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Abstract
A method of manufacturing a ferroelectric-based 3-dimensional flash memory is disclosed. Also, a 3-dimensional flash memory that improves ferroelectric polarization properties and a method of manufacturing the same are disclosed.
Claims10
A method of manufacturing a ferroelectric-based 3-dimensional flash memory, the method comprising:
- preparing a semiconductor structure comprising a plurality of word lines extending in a horizontal direction and stacked in a vertical direction on a substrate, a plurality of sacrificial layers interposed between the plurality of word lines and extending in the horizontal direction, and at least one hole formed to extend in the vertical direction and penetrate through the plurality of word lines and the plurality of sacrificial layers, wherein a barrier metal layer extending in the vertical direction is deposited on an inner wall of the at least one hole, and a ferroelectric layer used as a charge storage layer is deposited on an inner wall of the barrier metal layer;
- performing a rapid cooling process on the ferroelectric layer in the semiconductor structure;
- forming a channel layer to extend in the vertical direction on an inner wall of the ferroelectric layer;
- removing the plurality of sacrificial layers;
- and
- forming barrier metal regions isolated from one another by removing portions of the barrier metal layer through spaces formed by removing the plurality of sacrificial layers.
3 more elements
A 3-dimensional flash memory comprising:
- interlayer insulation layers and word lines extending in horizontal directions and alternately stacked in a vertical direction;
- and
- vertical channel structures extending and penetrating through the interlayer insulation layers and the word lines in the vertical direction, wherein each of the vertical channel structures comprises a vertical channel pattern extending in the vertical direction, a ferroelectric-based data storage pattern surrounding an outer wall of the vertical channel pattern, and a stress control pattern contacting an outer side wall of the data storage pattern,
- wherein the stress control pattern is used to generate stress with respect to the data storage pattern so as to improve orthorhombic properties of the data storage pattern.
1 more element
A method of manufacturing a 3-dimensional flash memory, the method comprising:
- preparing a semiconductor structure comprising interlayer insulation layers and sacrificial layers extending in horizontal directions and alternately stacked in a vertical direction;
- forming channel holes to extend in the vertical direction in the semiconductor structure;
- forming vertical channel structures to extend in the vertical direction, the vertical channel structures each comprising a stress control pattern, a ferroelectric-based data storage pattern, and a vertical channel pattern, in the channel holes;
- improving orthorhombic properties of the data storage pattern by generating stress between the stress control pattern and the data storage pattern;
- removing the sacrificial layers;
- and
- forming word lines in spaces formed by removing the sacrificial layers.
4 more elements
Dependencies are inferred from the claim text.