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US 2024/0196623 A1Published application
Electronic device including ferroelectric thin film, method of manufacturing the electronic device, and electronic apparatus including the electronic device
AssigneeSamsung Electronics Co., Ltd.
InventorsYunseong LEE, Jinseong HEO, Kihong KIM, Dukhyun CHOE, Hyunjae LEE, Sanghyun JO
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Abstract
An electronic device may include a conductive material layer, a ferroelectric layer covering the conductive material layer, and an electrode covering the ferroelectric layer. The ferroelectric layer may include a compound represented by HfxAyOz, where 0≤x≤1, 0≤y≤1, and 2(x+y)<z.
Claims20
An electronic device comprising:
- a conductive material layer;
- a ferroelectric layer covering the conductive material layer, the ferroelectric layer including a compound represented by HfxAyOz, where 0≤x≤1, 0≤y≤1), and 2(x+y)<z;
- and
- an electrode layer covering the ferroelectric layer.
1 more element
A semiconductor device comprising:
- a conductive material layer forming a channel;
- a ferroelectric layer covering the conductive material layer;
- a gate electrode covering the ferroelectric layer;
- and
- a source region and a drain region electrically connected to both ends of the channel,
- wherein the ferroelectric layer comprises a compound represented by HfxAyOz, where 0≤x≤1, 0≤y≤1, and 2(x+y)<z.
3 more elements
A method of manufacturing a ferroelectric thin film, the method comprising:
- forming a material layer comprising Hf, A, and O, on a base layer;
- and
- crystallizing the material layer by performing heat treatment on the material layer in a vacuum environment to provide a crystallized ferroelectric layer, the crystallized ferroelectric layer comprising a compound represented by HfxAyOz, where 0≤x≤1, 0≤y≤1 and having an oxygen content of 2(x+y)<z.
Dependencies are inferred from the claim text.