Memory device

A memory device comprising:

• a word line including a cell array region and a connection region extending in a first direction from the cell array region;
• a first select line and a second select line, spaced apart from each other in a second direction intersecting the first direction on the cell array region, the first select line and the second select line, extending onto the connection region;
• and
• an isolation pattern disposed between the first select line and the second select line,
• wherein the isolation pattern includes a first sub-isolation pattern extending in the first direction, a second sub-isolation pattern which is spaced apart from the first sub-isolation pattern in an oblique direction and extends in the second direction, and a third sub-isolation pattern connecting an end of the first sub-isolation pattern and an end of the second sub-isolation pattern to each other.

A memory device comprising:

• a first word line including a cell array region and a connection region extending in a first direction from the cell array region, the first word line being partitioned by a slit;
• a plurality of first sub-isolation patterns arranged to be spaced apart from each other in a second direction intersecting the first direction on the cell array region of the first word line, the plurality of first sub-isolation patterns extending onto the connection region;
• a plurality of second sub-isolation patterns extending in the second direction from the slit, the plurality of second sub-isolation patterns being spaced apart from each other in the first direction, the plurality of second sub-isolation patterns respectively corresponding to the plurality of first sub-isolation patterns;
• and
• a plurality of select lines disposed between the plurality of first sub-isolation patterns, the plurality of select lines extending between the plurality of second sub-isolation patterns,
• wherein the plurality of first sub-isolation patterns are formed to different lengths in the first direction.