US 2024/0196616 A1 · THREE-DIMENSIONAL MEMORY DEVICES WITH LATERAL BLOCK ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

Abstract

A memory device includes an alternating stack of insulating layers and composite layers that alternate along a vertical direction, arrays of memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and including a vertical semiconductor channel and a respective vertical stack of memory elements, and dielectric isolation structures laterally contacting each of the insulating layers and each of the composite layers. Each of the composite layers includes a combination of a dielectric connection plate and a plurality of electrically conductive layers that laterally extend along a first horizontal direction and that are laterally spaced apart along a second horizontal direction by backside trenches that laterally extend along the first horizontal direction.

Claims20

Dependent claims

A memory device, comprising:

an alternating stack of insulating layers and composite layers that alternate along a vertical direction, wherein each of the composite layers comprises a combination of a dielectric connection plate and a plurality of electrically conductive layers that laterally extend along a first horizontal direction and that are laterally spaced apart along a second horizontal direction by backside trenches that laterally extend along the first horizontal direction;
arrays of memory openings vertically extending through the alternating stack;
memory opening fill structures located in the memory openings, wherein each of the memory opening fill structures comprises a vertical semiconductor channel and a respective vertical stack of memory elements located at levels of the electrically conductive strips;
and
dielectric isolation structures laterally contacting each of the insulating layers and each of the composite layers.

2 more elements

A method of forming a semiconductor structure, comprising:

forming an alternating stack of insulating layers and sacrificial material layers comprising a dielectric material over a substrate;
forming dielectric isolation structures vertically extending through the alternating stack;
forming backside trenches through the alternating stack, wherein each of the backside trenches laterally extends along a first horizontal direction and each of the dielectric isolation structures comprises a sidewall that is exposed to a respective one of the backside trenches;
and
replacing portions of the sacrificial material layers that are proximal to the backside trenches with electrically conductive layers,
wherein each of the insulating layers comprises:
a plurality of finger portions that laterally extend along the first horizontal direction and are laterally spaced apart from each other along a second horizontal direction by a combination of a respective one of the backside trenches and a respective one of the dielectric isolation structures;
and
a base portion that is adjoined to each of the finger portions and laterally extends along the second horizontal direction.

6 more elements

Dependencies are inferred from the claim text.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Life of this patent

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Life of this patent

Abstract

Claims20