Apparatuses including insulative structures of stack structures having different portions and related memory devices
AssigneeLodestar Licensing Group LLC
InventorsSrikant Jayanti, Fatma Arzum Simsek-Ege, Pavan Kumar Reddy Aella
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Abstract
Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.
Claims20
An apparatus, comprising:
- a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the insulative structures individually comprising:
- a first portion proximal to the conductive structures;
- and
- a second portion distal to the conductive structures, a thickness of the second portion relatively greater than a thickness of the first portion;
- and
- discrete charge storage structures laterally adjacent to the conductive structures of the stack structure.
An apparatus, comprising:
- a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each of the tiers individually comprising a conductive structure and an insulative structure, the insulative structures comprising at least two different portions of dielectric material directly physically contacting one another along horizontal interfaces therebetween;
- charge storage structures laterally adjacent to the conductive structures of the stack structure;
- and
- charge block material between the charge storage structures and a respective conductive structure, a portion of the charge block material extending within recessed regions of the insulative structures of the stack structure.
A memory device, comprising:
- a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, at least some of the insulative structures comprising:
- opposing portions directly contacting the conductive structures;
- and
- a central portion separating the opposing portions from one another, a material composition of the central portion differing from a material composition of the opposing portions;
- and
- charge storage structures laterally aligned with the conductive structures of the stack structure.
Dependencies are inferred from the claim text.