Semiconductor integrated circuit device including split selection lines and method of manufacturing the semiconductor integrated circuit device

A semiconductor integrated circuit device comprising:

• a stack structure including at least one source selection line, a plurality of word lines and at least one drain selection line stacked in a first direction, an insulation layer interposed between the source selection line, the word lines and the drain selection line;
• a plurality of channel structures including a cylindrical channel layer extended in the stack structure along the first direction to face the source selection line, the word lines and the drain selection line;
• and
• a split structure formed in the stack structure, the split structure directly connected with at least one of the channel structures to split the drain selection lines into a plurality of lines,
• wherein a cut surface of the drain selection line is directly connected with the split structure, and a cut surface of the insulation layer and a cut surface of the channel structure are positioned adjacent to the drain selection line,
• wherein the cut surface of the drain selection line is positioned from a center line of the split structure by a first distance and the cut surface of the channel structure is positioned from a center line of the spit structure by a second distance,
• wherein the first distance is greater than the second distance, and
• wherein an impurity concentration of the channel layer in the channel structure contacted with the split structure is different from an impurity concentration of the channel layer in the channel structures spaced apart from the split structure.