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US 2024/0196601 A1Published application
Memory structure and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorYu-Ying LIN
Life of this patent
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Abstract
A memory structure and a method of manufacturing the same are provided. The method includes forming a gate structure and a source/drain region in a substrate, in which the source/drain region is next to the gate structure. A dry etching process is performed to form a trench in the source/drain region. A wet etching process is performed to expand the trench to form an expanded trench, in which the expanded trench has a polygonal cross section profile. A bit line contact is formed in the expanded trench.
Claims18
A method of manufacturing a memory structure, comprising:
- forming a gate structure and a source/drain region in a substrate, wherein the source/drain region is next to the gate structure;
- performing a dry etching process to form a trench in the source/drain region;
- performing a wet etching process to expand the trench to form an expanded trench, wherein the expanded trench has a polygonal cross section profile;
- and
- forming a bit line contact in the expanded trench.
2 more elements
A memory structure, comprising:
- a substrate;
- a gate structure disposed in the substrate;
- a source/drain region disposed in the substrate and next to the gate structure;
- and
- a bit line contact disposed in the source/drain region, wherein the bit line contact has a polygonal cross section profile, the bit line contact has a top surface and a first tilt sidewall, the first tilt sidewall extends from the top surface toward the gate structure, and the source/drain region covers the first tilt sidewall.
2 more elements
Dependencies are inferred from the claim text.