Semiconductor device

A semiconductor device comprising:

• a substrate containing deuterium at a first concentration;
• an active pattern disposed on the substrate and extending in a first horizontal direction;
• a gate electrode disposed on the active pattern and extending in a second horizontal direction different from the first horizontal direction;
• a gate insulating layer disposed between the active pattern and the gate electrode, the gate insulating layer containing deuterium at a second concentration lower than the first concentration;
• a first interlayer insulating layer disposed on the gate electrode;
• a second interlayer insulating layer disposed on the first interlayer insulating layer;
• and
• a wiring pattern disposed inside the second interlayer insulating layer, the wiring pattern containing deuterium at a third concentration,
• wherein each of the first to third concentrations is a concentration of deuterium atoms contained in the same unit volume.

A semiconductor device comprising:

• a substrate containing deuterium at a first concentration;
• an active pattern disposed on the substrate and extending in a first horizontal direction;
• a gate electrode extending in a second horizontal direction different from the first horizontal direction, a vertical level of a top surface of the gate electrode is lower than a vertical level of a top surface of the active pattern, at least a portion of the gate electrode overlaps with the active pattern in the first horizontal direction;
• a gate insulating layer disposed between the active pattern and the gate electrode, the gate insulating layer containing deuterium at a second concentration lower than the first concentration;
• a first interlayer insulating layer disposed on the gate electrode;
• a lower electrode disposed on the first interlayer insulating layer and extending in a vertical direction;
• an upper electrode surrounding the lower electrode;
• a capacitor dielectric layer disposed between the lower electrode and the upper electrode, the capacitor dielectric layer containing deuterium at a third concentration lower than the second concentration;
• a second interlayer insulating layer disposed on the upper electrode;
• and
• a wiring pattern disposed inside the second interlayer insulating layer, the wiring pattern containing deuterium at a fourth concentration lower than the third concentration,
• wherein each of the first to fourth concentrations is a concentration of deuterium atoms contained in the same unit volume.