Back to results
US 2024/0196592 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSeung Hwan KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a lower structure; a plurality of horizontal conductive layers that are oriented horizontally in a direction parallel to a surface of the lower structure; a vertical conductive line commonly coupled to first-side ends of the horizontal conductive layers and extending in a direction perpendicular to the surface of the lower structure; and a plurality of reservoir capacitors respectively coupled to second-side ends of the horizontal conductive layers and vertically stacked over the lower structure.
Claims19
A semiconductor device, comprising:
- a lower structure;
- a plurality of horizontal conductive layers that are oriented horizontally in a direction parallel to a surface of the lower structure;
- a vertical conductive line commonly coupled to first-side ends of the horizontal conductive layers and extending in a direction perpendicular to the surface of the lower structure;
- and
- a plurality of reservoir capacitors respectively coupled to second-side ends of the horizontal conductive layers and vertically stacked over the lower structure.
2 more elements
Dependencies are inferred from the claim text.