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US 2024/0196586 A1Published application
Stacked and non-stacked transistors with double-sided interconnects
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Albert M. Chu, Carl Radens, Ruilong Xie
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Abstract
A semiconductor structure is provided that includes a stacked transistor including at least one transistor stacked over another transistor and a non-stacked transistor integrated on a same wafer. Both the stacked transistor and the non-stacked transistor include frontside and backside interconnects.
Claims20
A semiconductor structure comprising:
- a non-stacked transistor having a frontside and a backside;
- a stacked transistor located laterally adjacent to the non-stacked transistor and having a frontside and a backside, the stacked transistor comprising two or more transistors stacked one atop the other;
- a frontside interconnect located on the frontside of both the non-stacked transistor and the stacked transistor;
- and
- a backside interconnect located on the backside of both the non-stacked transistor and the stacked transistor.
2 more elements
Dependencies are inferred from the claim text.