Drive device for semiconductor switching element, driving method therefor, and power conversion device

Abstract

A drive device for a voltage-driven semiconductor switching element includes: a gate drive circuit configured to drive the semiconductor switching element; and a gate voltage hold circuit configured to hold a gate voltage applied to the semiconductor switching element at a predetermined hold voltage higher than a threshold voltage of the semiconductor switching element and lower than a Miller voltage of the semiconductor switching element. The gate voltage hold circuit starts an operation of holding the gate voltage at the hold voltage after a rise of a voltage between main terminals of the semiconductor switching element at a turn-off time of the semiconductor switching element and before a maximum value of the voltage between the main terminals.

Dependencies are inferred from the claim text.