Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element

A method of manufacturing a semiconductor light-emitting element, the method comprising:

• forming an active layer on an n-type semiconductor layer;
• forming a p-type semiconductor layer on the active layer;
• partially removing each of the p-type semiconductor layer and the active layer to expose an upper surface of the n-type semiconductor layer;
• forming an n-side contact electrode in contact with the upper surface of the n-type semiconductor layer;
• forming a p-side contact electrode in contact with an upper surface of the p-type semiconductor layer;
• forming a protective layer made of a dielectric material and covering the n-type semiconductor layer, the active layer, the p-type semiconductor layer, the n-side contact electrode, and the p-side contact electrode;
• partially removing the protective layer to form an n-side opening and a p-side opening;
• forming an n-side pad electrode overlapping the protective layer to close the n-side opening;
• and
• forming a p-side pad electrode overlapping the protective layer to close the p-side opening,
• wherein at least one of the forming of the n-side contact electrode or the forming of the p-side contact electrode includes:
• forming a first resist having a first opening having an undercut shape;
• depositing an electrode layer in the first opening by using the first resist as a mask;
• and
• peeling and removing the first resist,
• wherein a width of the undercut shape of the first resist in a direction in which an edge of the first opening of the first resist extends and a predetermined direction orthogonal to a thickness direction of the first resist is equal to or more than 5 μm and equal to or less than 10 μm, and
• wherein a height of the undercut shape of the first resist is equal to or less than 1 μm.