Multilayer film structure and method for producing the same
AssigneeTosoh Corporation
InventorsYoshihiro UEOKA, Yuya SUEMOTO, Masami MESUDA
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Abstract
A multilayer film structure includes a SiC substrate and a film disposed on the SiC substrate and containing a nitride-based material at least containing Ga, wherein the multilayer film structure has an off-angle of 0.03° or more and 8° or less with respect to a Silicon face of a (0001) plane of a SiC single crystal forming the SiC substrate and the film containing the nitride-based material has a C content of 2×1019 atoms/cm3 or less and a Cl content of 2×1018 atoms/cm3 or less.
Claims15
A multilayer film structure comprising a SiC substrate and a film disposed on the SiC substrate and containing a nitride-based material at least containing Ga, wherein the multilayer film structure has an off-angle of 0.03° or more and 8° or less with respect to a Silicon face of a (0001) plane of a SiC single crystal forming the SiC substrate and the film containing the nitride-based material has a C content of 2×1019 atoms/cm3 or less and a Cl content of 2×1018 atoms/cm3 or less.
Dependencies are inferred from the claim text.