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US 2024/0194826 A1Published application
Stress-strain engineering of semiconductor membranes
AssigneeUniversity of Surrey
InventorsSteven Clowes, David Cox, Mateus Masteghin, Stephen Sweeney
Life of this patent
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Abstract
A semiconductor structure comprising: a semiconductor membrane, the semiconductor membrane having at least one amorphised area and an active area wherein the at least one amorphised area is adjacent the active area such that the at least one amorphised area exerts strain on the active area and a method of introducing strain into a crystalline semiconductor membrane by ion implantation.
Claims21
A semiconductor structure comprising:
- a semiconductor membrane, wherein the semiconductor membrane has at least one amorphised area and an active area, wherein the at least one amorphised area is adjacent the active area such that the at least one amorphised area exerts strain on the active area,
- wherein the semiconductor membrane comprises a surface layer and a subsurface layer, wherein the surface layer comprises the active area and the at least one amorphised area, and the subsurface layer is crystalline, such that the semiconductor membrane exhibits bi-material bowing where the semiconductor membrane has been amorphised.
(canceled)
A method of introducing strain into a crystalline semiconductor membrane comprising:
- providing a crystalline semiconductor membrane,
- defining at least one implantation area and an active area adjacent the at least one implantation area on the surface of the semiconductor membrane, and
- implanting ions into the at least one implantation area of the semiconductor membrane such that the semiconductor membrane becomes amorphised in the at least one implantation area causing the semiconductor membrane to exhibit bi-material bowing where the semiconductor membrane has been amorphised and causing strain in the active area.
Dependencies are inferred from the claim text.