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OwnerAlberto Gola, Fabio Acerbi +5inventors
InventorsAlberto Gola, Fabio Acerbi, Giacomo Borghi, Andrea Ficorella, Alberto Mazzi, Stefano Merzi, Giovanni Paternoster
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A diode radiation sensor includes a substrate; a first layer of semiconductor material doped with a doping of a first type and provided on the front surface of the substrate; a second layer of semiconductor material doped with a doping of a second type of electrically opposite sign to the first type and provided at a first depth in the substrate, the first and the second layer forming a high electric field region therebetween; a third layer of semiconductor material doped with a doping of the second type and provided at a second depth in the substrate greater than the first depth; and a first isolation region provided peripherally to the substrate and extending deep in the substrate up to an intermediate area between the front and the rear surface of the substrate. A passivation layer is interposed between the lateral wall of the first isolation region and the substrate.
A diode radiation sensor having one or more charge multiplication diodes (2), said diode radiation sensor (1;
Dependencies are inferred from the claim text.