Gallium oxide back-passivated solar cell and preparation method therefor
AssigneeHengdian Group Dmegc Magnetics Co., Ltd
InventorsChaoyan FANG, Yue HE, Hailiang REN, Yong REN, Deshuang CHEN
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AssigneeHengdian Group Dmegc Magnetics Co., Ltd
InventorsChaoyan FANG, Yue HE, Hailiang REN, Yong REN, Deshuang CHEN
Estimating the term…
The present application provides a gallium oxide back-passivated solar cell and a preparation method therefor. The solar cell comprises a P-type silicon substrate. A front coating and a back coating are respectively provided on two opposite side surfaces of the P-type silicon substrate. The front coating comprises an emitter, a front silicon oxide layer, and a front silicon nitride layer which are sequentially stacked from the surface of the P-type silicon substrate to the outside. The back coating comprises a silicon oxide passivation layer, a gallium oxide passivation layer, and a back passivation layer which are sequentially stacked from the surface of the P-type silicon substrate to the outside.
A gallium oxide back-passivated solar cell, wherein the solar cell comprises a P-type silicon substrate, the P-type silicon substrate is provided with a front coating and a back coating on the surfaces of opposite sides, respectively;
Dependencies are inferred from the claim text.