Thin film transistor substrate and electronic device
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorsZhifu LI, Guanghui LIU, Fei AI, Dewei SONG, Zhuang LI
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Abstract
The present application provides a thin film transistor substrate and an electronic device. The thin film transistor substrate includes: a substrate; a boss including an undercut structure, the undercut structure is located on a side wall of the boss; a filler located in the undercut structure; and an active layer located on the boss and the substrate, the active layer includes a channel, and the channel covers the undercut structure and the filler.
Claims20
A thin film transistor substrate comprising:
- a substrate;
- a boss located on the substrate, wherein the boss comprises an undercut structure, the undercut structure is located on a side wall of the boss;
- a filler located in the undercut structure;
- and
- an active layer located on the boss and the substrate, wherein the active layer comprises a channel, the channel covers the undercut structure and the filler.
A thin film transistor substrate comprising:
- a substrate;
- a boss located on the substrate, wherein the boss comprises an undercut structure, the undercut structure is located on a side wall of the boss and on a side of the boss close to the substrate;
- a filler located in the undercut structure;
- and
- an active layer located on the boss and the substrate, wherein the active layer comprises a channel, the channel is a single-crystal structure, and the channel covers the undercut structure and the filler.
An electronic device, wherein the electronic device comprises a thin film transistor substrate, and the thin film transistor substrate comprises:
- a substrate;
- a boss located on the substrate, wherein the boss comprises an undercut structure, the undercut structure is located on a side wall of the boss;
- a filler located in the undercut structure;
- and
- an active layer located on the boss and the substrate, wherein the active layer comprises a channel, the channel covers the undercut structure and the filler.
Dependencies are inferred from the claim text.