Semiconductor structure and method for forming the same
AssigneeWinbond Electronics Corp.
InventorsTzu-Yun HUANG, Chung-Hsien LIU
Life of this patent
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Abstract
A semiconductor structure includes a substrate, a dielectric structure, a floating gate, and a control gate. The substrate has a protrusion, a first recess, and a second recess, wherein the first recess and the second recess are on opposite sides of the protrusion. The dielectric structure extends from the first recess and the second recess to above a top surface of the protrusion. The floating gate is disposed over the substrate and adjoins a sidewall of the dielectric structure. The control gate is disposed over the floating gate and extends over a top surface of the dielectric structure to directly above the protrusion.
Claims18
A semiconductor structure, comprising:
- a substrate having a protrusion, a first recess, and a second recess, wherein the first recess and the second recess are on opposite sides of the protrusion:
- a dielectric structure extending from the first recess and the second recess to above a top surface of the protrusion;
- a floating gate disposed over the substrate and adjoining a sidewall of the dielectric structure;
- and
- a control gate disposed over the floating gate and extending over a top surface of the dielectric structure to directly above the protrusion.
A method of forming a semiconductor structure, comprising:
- forming a floating gate over a substrate;
- forming a trench in the floating gate to expose a top surface of the substrate;
- forming a self-aligned core structure in the trench;
- forming a photoresist such that the photoresist comprises a first portion covering a top surface of the floating gate and a top surface of the self-aligned core structure and a second portion covering a sidewall of the self-aligned core structure;
- removing the self-aligned core structure and the first portion of the photoresist and leaving the second portion of the photoresist;
- and
- etching the substrate using the second portion of the photoresist as a mask to form a first recess, a second recess and a buried dummy structure.
Dependencies are inferred from the claim text.