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US 2024/0194754 A1Published application
Semiconductor device and corresponding methods of manufacture
AssigneeInfineon Technologies Austria AG
InventorsWeichun Huang, Martin Poelzl, Thomas Martin Feil, Maximilian Roesch
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Abstract
A semiconductor device includes a contact opening extending through a source region and at least into a body region formed in a semiconductor substrate. The contact opening forms at least one sidewall in the semiconductor substrate. An electrically insulative spacer partially covers the at least one sidewall. A contact plug is in the contact opening. A body contact region is formed in the semiconductor substrate adjacent a bottom of the contact opening.
Claims19
A semiconductor device, comprising:
- a semiconductor substrate having a first main surface;
- a source region having a first conductivity type and formed in the semiconductor substrate;
- a body region having a second conductivity type opposite the first conductivity type and formed in the semiconductor substrate below the source region;
- a contact opening extending from the first surface through the source region and at least into the body region, the contact opening forming at least one sidewall in the semiconductor substrate, the at least one sidewall comprising a first portion extending along the source region and a second portion extending along the body region;
- an electrically insulative spacer partially covering the at least one sidewall, wherein the electrically insulative spacer covers the entire second portion of the at least one sidewall and leaves at least a portion of the first portion of the at least one sidewall uncovered;
- a body contact region having the second conductivity type and formed in the semiconductor substrate adjacent a bottom of the contact opening;
- and
- a contact plug in the contact opening, the contact plug being electrically connected with the source region via the uncovered portion in the first region of the at least one sidewall, and the contact plug being electrically connected with the body contact region.
5 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first main surface;
- a source region having a first conductivity type and formed in the semiconductor substrate;
- a body region having a second conductivity type opposite the first conductivity type and formed in the semiconductor substrate below the source region;
- a drift region having the first conductivity type and formed in the semiconductor substrate below the body region;
- a contact opening extending from the first surface through the source region and through the body region into the drift region, the contact opening forming at least one sidewall in the semiconductor substrate;
- an electrically insulative spacer partially covering the at least one sidewall;
- a body contact region having the second conductivity type and formed in the drift region adjacent a bottom of the contact opening, wherein the body region and the body contact region are separated from each other by a portion of the drift region;
- and
- a contact plug in the contact opening.
6 more elements
Dependencies are inferred from the claim text.