Transistor devices including self-aligned ohmic contacts and contact regions and related fabrication methods
AssigneeWolfspeed, Inc.
InventorsKyle Bothe, Chris Hardiman, Chloe Hawes, Daniel Namishia, Evan Jones
Life of this patent
Estimating the term…
Abstract
A transistor device includes a semiconductor structure having an implanted region adjacent a surface thereof; and a source/drain contact including an ohmic contact portion on the implanted region of the semiconductor structure. The implanted region laterally extends beyond the ohmic contact portion by less than about 0.8 microns, e.g., by less than about 0.2 microns or such that a boundary of the implanted region is substantially aligned with an edge of the ohmic contact portion. Related fabrication methods are also discussed.
Claims30
A transistor device, comprising:
- a semiconductor structure comprising an implanted region adjacent a surface thereof;
- and
- a source/drain contact comprising an ohmic contact portion on the implanted region of the semiconductor structure,
- wherein the implanted region laterally extends beyond the ohmic contact portion by less than about 0.8 microns.
A transistor device, comprising:
- a semiconductor structure comprising a contact region adjacent a surface thereof;
- and
- a source/drain contact comprising an ohmic contact portion on the contact region of the semiconductor structure,
- wherein an electrical resistance of a lateral extension of the contact region beyond an edge of the ohmic contact portion is substantially zero.
A transistor device, comprising:
- a semiconductor structure comprising implanted regions adjacent a surface thereof;
- and
- source and drain contacts on the implanted regions of the semiconductor structure, respectively,
- wherein a lateral distance between the source and drain contacts is about 3 microns or less, and an on-resistance of the transistor device is less than about 1.7 ohm-millimeters.
A method of fabricating a transistor device, the method comprising:
- forming an implanted region in a surface of a semiconductor structure;
- and
- forming a source/drain contact comprising an ohmic contact portion on the implanted region of the semiconductor structure such that an edge of the ohmic contact portion is self-aligned with a boundary of the implanted region.
Dependencies are inferred from the claim text.