Solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorYASUHIRO EBIHARA
Life of this patent
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Abstract
A solid-state imaging device includes a first semiconductor layer, a transistor, and an electric field relaxation section. The transistor includes: a fin provided to stand on a main surface section of the first semiconductor layer; a first main electrode, a channel-forming region, and a second main electrode that are provided in the fin along a channel length direction; and a gate insulating film and a gate electrode that cover an upper surface and a side surface of the fin to extend over the fin along a channel width direction. The electric field relaxation section is provided in a lower part of the side surface of the fin to relax electric field concentration.
Claims18
A solid-state imaging device comprising:
- a first semiconductor layer;
- a transistor including a fin provided to stand on a main surface section of the first semiconductor layer, a first main electrode, a channel-forming region, a second main electrode, a gate insulating film, and a gate electrode,
- the first main electrode, the channel-forming region, and the second main electrode being provided in the fin along a channel length direction,
- the gate insulating film and the gate electrode covering an upper surface and a side surface of the fin to extend over the fin along a channel width direction;
- and
- an electric field relaxation section provided in a lower part of the side surface of the fin to relax electric field concentration.
Dependencies are inferred from the claim text.