Thin film transistor and method for manufacturing same, display panel, and display device

A method for manufacturing a thin film transistor, comprising:

• forming an active layer, source and drain electrodes, and an oxygen supplementation layer on a side of the base substrate;
• wherein
• the source and drain electrodes are disposed on a side, distal from the base substrate, of the active layer;
• and
• the oxygen supplementation layer is disposed on the side, distal from the base substrate, of the active layer, and contains a metal oxide, an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, and the orthogonal projection of the target portion on the base substrate is not overlapped with orthogonal projections of the source and drain electrodes on the base substrate.

A display panel, comprising:

• a base substrate, and a thin film transistor disposed on the base substrate;
• wherein the thin film transistor comprises:
• an active layer disposed on a side of the base substrate;
• source and drain electrodes disposed on a side, distal from the base substrate, of the active layer;
• and
• an oxygen supplementation layer disposed on the side, distal from the base substrate, of the active layer and containing a metal oxide, wherein an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, and the orthogonal projection of the target portion on the base substrate is not overlapped with orthogonal projections of the source and drain electrodes on the base substrate.