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US 2024/0194680 A1Published application
Bidirectional device
AssigneeGlobalFoundries U.S. Inc.
InventorsSantosh SHARMA, Michael J. ZIERAK, Mark D. LEVY, Steven J. BENTLEY
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure adjacent to a first source region; a second gate structure adjacent to a second source region; and field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.
Claims20
A structure comprising:
- a first gate structure adjacent to a first source region;
- a second gate structure adjacent to a second source region;
- and
- field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.
1 more element
A structure comprising:
- a first gate structure on an active semiconductor material and which comprises a first source region;
- a second gate structure on the active semiconductor material and which comprises a second source region;
- a first contact to the first source region;
- a second contact to the second source region;
- and
- a field plate surrounding the first contact and the second contact.
3 more elements
A method comprising:
- forming a first gate structure adjacent to a first source region;
- forming a second gate structure adjacent to a second source region;
- and
- forming field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.
1 more element
Dependencies are inferred from the claim text.