Semiconductor device with helmet structure between two semiconductor fins

A semiconductor device, comprising:

• a first channel pattern;
• a second channel pattern;
• a first gate structure extending across the first channel pattern;
• a second gate structure extending across the second channel pattern;
• a plurality of first epitaxial structures at opposite sides of the first gate structure;
• a plurality of second epitaxial structures at opposite sides of the second gate structure;
• an oxide material laterally between the first and second channel patterns;
• a first dielectric layer over the oxide material;
• and
• a second dielectric layer wrapping around the oxide material and the first dielectric layer.

A semiconductor device, comprising:

• a first semiconductive channel pattern;
• a second semiconductive channel pattern;
• first source/drain patterns on the first semiconductive channel pattern;
• second source/drain patterns on the second semiconductive channel pattern;
• an oxide material laterally between the first and second semiconductive channel patterns from a cross-sectional view;
• a metal oxide layer over the oxide material;
• a dielectric layer cupping an underside of the oxide material and the metal oxide layer, the metal oxide layer comprising edge regions contacting the dielectric layer and a central region laterally between the edge regions, the central region having a thinner thickness than the edge regions from the cross-sectional view;
• and
• a gate pattern extending across the first and second semiconductive channel patterns and the dielectric layer.