Semiconductor device with isolation structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShi-Ning JU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures and a gate stack wrapped around the semiconductor nanostructures. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching one or more of the semiconductor nanostructures. The semiconductor device structure further includes an isolation structure continuously extending across edges of the semiconductor nanostructures.
Claims20
A semiconductor device structure, comprising:
- a plurality of semiconductor nanostructures;
- a gate stack wrapped around the semiconductor nanostructures;
- a first epitaxial structure and a second epitaxial structure sandwiching at least one of the semiconductor nanostructures;
- and
- an isolation structure continuously extending across edges of the semiconductor nanostructures.
A semiconductor device structure, comprising:
- a plurality of channel structures over a substrate;
- a gate stack wrapped around the channel structures;
- a first epitaxial structure and a second epitaxial structure each connecting at least one of the channel structures;
- and
- an isolation structure between the channel structures and the substrate, wherein the isolation structure continuously extends across opposite edges of the first epitaxial structure and at least one edge of the second epitaxial structure.
A semiconductor device structure, comprising:
- a plurality of channel structures over a substrate;
- a gate stack wrapped around the channel structures;
- a first epitaxial structure and a second epitaxial structure each connecting the at least one of the channel structures;
- and
- an isolation structure between the channel structures and the substrate, wherein the isolation structure is a continuous structure extending across opposite edges of the first epitaxial structure, and the isolation structure is wider than each of the channel structures.
Dependencies are inferred from the claim text.