US 2024/0194672 A1 · MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW

Abstract

An IC device may include a first conductive structure in a first section and a second conductive structure in a second section. The second conductive structure is in parallel with the first conductive structure in a first direction. A dimension of the second conductive structure in a second direction perpendicular to the first direction is greater than a dimension of the first conductive structure in the second direction. The first conductive structure may be coupled to a channel region of a transistor. The second conductive structure may be coupled to a channel region of another transistor. A first structure comprising a first dielectric material may be over the first conductive structure. A second structure comprising a second dielectric material may be over the second section. A third structure comprising the first dielectric material may be over the second conductive structure and be at least partially surrounded by the second structure.

Claims20

Dependent claims

An integrated circuit (IC) device, comprising:

a first layer, comprising:
a first conductive structure, and
a second conductive structure,
wherein the second conductive structure is in parallel with the first conductive structure in a first direction, and a dimension of the second conductive structure in a second direction perpendicular to the first direction is greater than a dimension of the first conductive structure in the second direction;
a second layer over the first layer, the second layer comprising:
a first structure over the first conductive structure, the first structure comprising a first dielectric material,
a second structure over the second conductive structure, the second structure comprising the first dielectric material, and
a third structure at least partially surrounding the second structure, the third structure comprising a second dielectric material that is different from the first dielectric material.

5 more elements

A method for forming an integrated circuit (IC) device, comprising:

forming a lamellar pattern over a first section of a layer through directed self-assembly of a block copolymer, the first section comprising a first conductive structure;
forming a first structure over the first conductive structure based on the lamellar pattern, the first structure comprising a first dielectric material;
forming a second structure over a second section of the layer, the second structure comprising a second dielectric material that is different from the first dielectric material, the second section comprising a second conductive structure;
forming an insulative structure based on the lamellar pattern, the insulative structure at least partially surrounding the first structure;
providing a first plug and a second plug, wherein at least a portion of the first plug is over at least a portion of the insulative structure, and the second plug is over the second structure;
forming a first opening in the first structure based on the first plug and forming a second opening in the second structure based on the second plug;
and
filling at least part of the first opening or the second opening with the first dielectric material.

5 more elements

Dependencies are inferred from the claim text.

Multi-pitch patterning through one-step flow

Life of this patent

Multi-pitch patterning through one-step flow

Life of this patent

Abstract

Claims20