Asymmetrically bonded integrated circuit devices
AssigneeInternational Business Machines Corporation
InventorsRuqiang Bao, Fee Li Lie, Michael P. Belyansky, Matt Malley
Life of this patent
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Abstract
A multi-layer stacked semiconductor device includes a first integrated circuit device and a bonding insulator layer formed upon the first integrated circuit device. The bonding insulator layer includes an insulating material layer and an etch stop layer. The semiconductor device also includes a second integrated circuit device formed over the first integrated circuit device in a stacked configuration. The semiconductor device also includes a bonding insulator layer formed between the second integrated circuit device and the insulating material layer. The insulating material layer and the bonding insulator layer are bonded adjacent to one another.
Claims20
A multi-layer stacked semiconductor device comprising:
- a first integrated circuit device;
- a bonding insulator formed upon the first integrated circuit device, wherein the bonding insulator comprises an insulating material layer and an etch stop layer;
- a second integrated circuit device formed over the first integrated circuit device in a stacked configuration;
- and
- a bonding insulator layer formed between the second integrated circuit device and the insulating material layer;
- wherein the insulating material layer and the bonding insulator layer are bonded adjacent to one another.
A method for fabricating a multi-layer stacked semiconductor device, the method comprising:
- depositing an etch stop layer upon a first integrated circuit device;
- depositing a sacrificial insulating layer upon the etch stop layer;
- removing the sacrificial insulator layer;
- depositing an insulating material layer upon the etch stop layer;
- and
- bonding a semiconductor template stack to the insulating material layer.
A semiconductor chip comprising a multi-layer stacked semiconductor device, the multi-layer stacked semiconductor device comprising:
- a first integrated circuit device;
- a bonding insulator formed upon the first integrated circuit device, wherein the bonding insulator comprises an insulating material layer and an etch stop layer;
- a second integrated circuit device formed over the first integrated circuit device in a stacked configuration;
- and
- a bonding insulator layer formed between the second integrated circuit device and the insulating material layer:
- wherein the insulating material layer and the bonding insulator layer are bonded adjacent to one another.
Dependencies are inferred from the claim text.