Metal pads over tsv
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsGuilian Gao, Bongsub Lee, Gaius Gillman Fountain, JR., Cyprian Emeka Uzoh, Laura Wills Mirkarimi, Belgacem Haba, Rajesh Katkar
Life of this patent
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Abstract
Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.
Claims20
A method of forming a microelectronic assembly, comprising:
- providing a first through substrate via (TSV) in a first substrate having a first surface;
- forming a first metal contact pad in the first surface electrically coupled to and aligned over the first TSV;
- forming a second metal contact pad in the first surface, the second metal contact pad having no TSV aligned thereunder, wherein the second metal contact pad has a different structure from the first metal contact pad to allow greater expansion of the TSV and first metal contact pad relative to the second metal contact pad;
- and
- treating the first surface, the first metal contact pad and the second metal contact pad to form a first bonding surface for direct hybrid bonding.
A microelectronic assembly, comprising:
- a first substrate comprising a first through substrate via (TSV) and a first bonding surface configured for direct hybrid bonding;
- a first metal contact pad at the first bonding surface, the first metal contact pad aligned with and in electrical contact with the first TSV;
- and
- a second metal contact pad at the first bonding surface, the second metal contact pad not aligned with any TSV in the first substrate, wherein the first metal contact pad is thinner in a dimension normal to the first bonding surface compared to the second metal contact pad.
A microelectronic assembly, comprising:
- a first substrate comprising a first bonding surface, the first substrate comprising
- a first through substrate via (TSV),
- a first metal contact pad at the first bonding surface, the first metal contact pad aligned with and in electrical contact with the first TSV, and
- a second metal contact pad at the first bonding surface, the second metal contact pad without a corresponding TSV in the first substrate, wherein the first metal contact pad is thinner in a dimension normal to the first bonding surface than a thickness of the second metal contact pad;
- and
- a second substrate comprising a second bonding surface, the second substrate comprising
- a third metal contact pad at the second bonding surface, and
- a fourth metal contact pad at the second bonding surface;
- wherein the first bonding surface is direct hybrid bonded to the second bonding surface such that the first metal contact pad is directly bonded to the third metal contact pad and the second metal contact pad is directly bonded to the fourth metal contact pad.
Dependencies are inferred from the claim text.