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US 2024/0194622 A1Published application
Semiconductor structure having protective layer on sidewall of conductive member and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorHSIH-YANG CHIU
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Abstract
The present application provides a semiconductor structure including a substrate and a conductive member over the substrate. The conductive member includes a seed layer over the substrate, a core disposed over the seed layer, and a protective layer disposed on a top surface of the core and surrounding a sidewall of the core. A method of manufacturing a semiconductor structure is also disclosed.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a conductive member disposed over the substrate;
- a dielectric layer over the substrate and surrounding the conductive member;
- and
- a capping layer disposed over the protective layer and the core;
- wherein the conductive member includes a seed layer disposed over the substrate, a core disposed over the seed layer, and a protective layer disposed on a top surface of the core and surrounding a sidewall of the core;
- wherein a width of the capping layer is substantially greater than a width of the seed layer.
4 more elements
A semiconductor structure, comprising:
- a substrate;
- a first conductive member disposed over the substrate;
- and
- a second conductive member disposed over the substrate and adjacent to the first conductive member;
- wherein the first conductive member includes a first seed layer disposed over the substrate, a first core disposed over the seed layer, a first protective layer disposed on a top surface of the first core and on a sidewall of the first core, and a first capping layer disposed over the first protective layer;
- wherein a width of the second capping layer is substantially greater than a width of the second seed layer;
- wherein a height of the first conductive member is equal to a height of the second conductive member.
4 more elements
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate having a first layer;
- forming a photoresist over the first layer;
- removing a first portion of the photoresist to form a first opening exposing a first portion of the first layer;
- disposing a first material within the first opening to form a first core;
- removing a second portion of the photoresist to form a first gap surrounding the first core;
- disposing a second material within the first gap and over the first core to form a first protective layer;
- disposing a third material over the first protective layer to form a first capping layer;
- removing the photoresist after the formation of the first capping layer;
- and
- removing a portion of the first layer to form a first undercut between the first protective layer and the substrate and to form a first seed layer between the first core and the substrate;
- and
- disposing a dielectric layer over the substrate to surround the conductive member;
- wherein the first undercut surrounds the first seed layer.
10 more elements
Dependencies are inferred from the claim text.