Semiconductor device package
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorWen Hung HUANG
Life of this patent
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Abstract
The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
Claims20
An antenna structure, comprising:
- an antenna region having a first thickness, the antenna region comprising a first antenna and a second antenna configured to be operated with different frequencies;
- and
- a circuit region disposed over the antenna region and having a second thickness less than the first thickness of the antenna region.
An antenna structure, comprising:
- an antenna layer including a first dielectric layer having a first coefficient of thermal expansion (CTE);
- a circuit layer including a second dielectric layer having a second CTE less than the first CTE;
- and
- a connection layer connecting the antenna layer to the circuit layer, wherein a material of the connection layer is different from a material of the first dielectric layer and the second dielectric layer.
An antenna structure, comprising:
- an antenna layer comprising a first dielectric layer having a first CTE and a first width;
- and
- a first circuit layer disposed over the antenna layer and comprising a second dielectric layer, wherein the second dielectric layer has a second CTE less than the first CTE and a second width less than the first width.
Dependencies are inferred from the claim text.