Semiconductor device and manufacturing method thereof, memory and memory system

A semiconductor device comprising:

• a semiconductor layer;
• a stack structure on the semiconductor layer, the stack structure comprising interlayer material layers and interlayer insulating layers which are alternately stacked, the interlayer material layer comprising a gate structure and an interlayer sacrificial layer;
• a protection layer between the gate structure and the interlayer sacrificial layer;
• and
• a contact structure extending from a side of the stack structure facing away from the semiconductor layer into the interlayer sacrificial layer and connected with the gate structure.

A memory system comprising:

• a memory array comprising:
• a semiconductor layer;
• a stack structure on the semiconductor layer, the stack structure comprising interlayer material layers and interlayer insulating layers which are alternately stacked, the interlayer material layer comprising a gate structure and an interlayer sacrificial layer;
• a protection layer between the gate structure and the interlayer sacrificial layer;
• and
• a contact structure extending from a side of the stack structure facing away from the semiconductor layer into the interlayer sacrificial layer and connected with the gate structure;
• and
• a controller connected with the memory array.