Wiring structure and semiconductor device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDonghoon KWON, Yanghee LEE, Jonghyuk PARK
Life of this patent
Estimating the term…
Abstract
A wiring structure includes a substrate; a lower insulating layer on the substrate; a lower wiring structure extending in a vertical direction and passing through the lower insulating layer; a spacer surrounding a side wall of the lower wiring structure; a capping insulating layer on the lower insulating layer; and a via structure extending in the vertical direction and passing through the capping insulating layer, wherein the via structure overlaps the lower wiring structure and the spacer in the vertical direction, and the via structure includes a protruding portion extending in the vertical direction and passing through at least a portion of the spacer.
Claims20
A wiring structure, comprising:
- a lower insulating layer;
- a lower wiring structure extending in a vertical direction and passing through the lower insulating layer;
- a spacer surrounding a side wall of the lower wiring structure;
- a capping insulating layer on the lower insulating layer;
- and
- a via structure extending in the vertical direction and passing through the capping insulating layer,
- wherein:
- the via structure overlaps the lower wiring structure and the spacer in the vertical direction, and
- the via structure includes a protruding portion extending in the vertical direction and passing through at least a portion of the spacer.
A semiconductor device, comprising:
- a substrate;
- a plurality of capacitor structures including a plurality of lower electrodes on the substrate, a capacitor dielectric layer covering the plurality of lower electrodes, and an upper electrode filling a space between the plurality of lower electrodes and covering an upper surface of the capacitor dielectric layer;
- and
- a wiring structure on and connected to the plurality of capacitor structures,
- wherein the wiring structure includes:
- a lower insulating layer on the substrate;
- a lower wiring structure extending in a vertical direction and passing through the lower insulating layer;
- a spacer surrounding a side wall of the lower wiring structure;
- a capping insulating layer on the lower insulating layer;
- and
- a via structure extending in the vertical direction and passing through the capping insulating layer,
- wherein:
- the via structure overlaps the lower wiring structure and the spacer in the vertical direction, and
- the via structure includes a protruding portion extending in the vertical direction and passing through at least a portion of the spacer.
A wiring structure, comprising:
- a lower insulating layer;
- a plurality of lower wiring structures extending in a vertical direction and passing through the lower insulating layer;
- a spacer surrounding a side wall of the lower wiring structure;
- a capping insulating layer including a first capping insulating layer and a second capping insulating layer sequentially on the lower insulating layer;
- an upper insulating layer on the capping insulating layer;
- and
- a first via structure and a second via structure separated from each other, extending in the vertical direction, and passing through the upper insulating layer and the capping insulating layer,
- wherein:
- the first via structure overlaps the lower wiring structure and the spacer in the vertical direction,
- the second via structure overlaps the lower wiring structure in the vertical direction, and
- the first via structure includes a protruding portion extending in the vertical direction and passing through at least a portion of the spacer.
Dependencies are inferred from the claim text.