Semiconductor device
AssigneeKioxia Corporation
InventorHanae ISHIHARA
Life of this patent
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Abstract
In one embodiment, a semiconductor device includes a substrate, a first stacked film provided above the substrate, includes a plurality of electrode layers and a plurality of first insulators that are alternately stacked in a first direction, and included in a memory cell array, and a second stacked film provided above the substrate, includes one or more first insulators of the plurality of first insulators, and one or more first films that are stacked alternately with the one or more first insulators in the first direction. The device further includes a first plug provided in the second stacked film, and a first interconnect layer provided on the memory cell array and the first plug, and electrically connected to the memory cell array and the first plug.
Claims20
A semiconductor device comprising:
- a substrate;
- a first stacked film provided above the substrate, includes a plurality of electrode layers and a plurality of first insulators that are alternately stacked in a first direction, and included in a memory cell array;
- a second stacked film provided above the substrate, includes one or more first insulators of the plurality of first insulators, and one or more first films that are stacked alternately with the one or more first insulators in the first direction;
- a first plug provided in the second stacked film;
- and
- a first interconnect layer provided on the memory cell array and the first plug, and electrically connected to the memory cell array and the first plug.
A semiconductor device comprising:
- a substrate;
- a first stacked film provided above the substrate, including a plurality of electrode layers and a plurality of first insulators that are alternately stacked in a first direction, and included in a memory cell array;
- a third stacked film provided on a lower face and a side face of a stairway structure portion of the first stacked film, and including a fifth insulator and a sixth insulator that is provided below the fifth insulator;
- a fourth stacked film provided above the substrate, including the fifth insulator and the sixth insulator that is provided below the fifth insulator;
- a first plug provided in the fourth stacked film;
- and
- a first interconnect layer provided on the memory cell array and the first plug, and electrically connected to the memory cell array and the first plug.
A semiconductor device comprising:
- a substrate;
- a first stacked film provided above the substrate, including a plurality of electrode layers and a plurality of first insulators that are alternately stacked in a first direction, and included in a memory cell array;
- a second stacked film provided above the substrate, including one or more first insulators of the plurality of first insulators, and one or more first films that are stacked alternately with the one or more first insulators in the first direction;
- a first plug provided in the second stacked film, and having an upper end at a lower position than an upper face of the second stacked film;
- and
- a first interconnect layer provided on the memory cell array and the first plug, having a lower face at a lower position than a lower face of the second stacked film, and electrically connected to the memory cell array and the first plug.
Dependencies are inferred from the claim text.