Semicondcutor devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Wei Su, Yung-Hsu Wu, Hsin-Ping Chen, Chih Wei LU, Wei-Hao Liao, Hsi-Wen Tien, Cherng-Shiaw Tsai
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Abstract
A method of forming a semiconductor device includes the following operations. A substrate is provided with an electric component. A composite dielectric layer is formed on the substrate and covers the electric component. An opening is formed through the composite dielectric layer. A directional etching process is performed to widen an upper portion of the opening. A metal feature is formed in the opening.
Claims20
A method of forming a semiconductor device, comprising:
- providing a substrate having an electric component;
- forming a composite dielectric layer over the substrate, the composite dielectric layer covering the electric component;
- forming an opening through the composite dielectric layer;
- performing a directional etching process to widen an upper portion of the opening;
- and
- forming a metal feature in the opening.
A method of forming a semiconductor device, comprising:
- forming a gate stack on a substrate, a strained layer in the substrate aside the gate stack, a metal contact on the strained layer, and a first dielectric layer over the gate stack and surrounding the metal contact;
- forming a shielding layer over the first dielectric layer and the metal contact;
- forming a second dielectric layer over the shielding layer;
- forming a first opening through the second dielectric layer, the shielding layer and the first dielectric layer, wherein the first opening exposes a gate electrode of the gate stack;
- elongating a dimension of an upper portion of the first opening in a first direction;
- and
- forming a first metal feature in the first opening.
A semiconductor device, comprising:
- a substrate having an electric component;
- a lower dielectric layer disposed over substrate and covering the electric component;
- an upper dielectric layer disposed on the lower dielectric layer;
- and
- a first metal feature penetrating through the upper dielectric layer and the lower dielectric layer and electrically connected to the electric component,
- wherein the metal feature has a turning point around an interface between the lower dielectric layer and the upper dielectric layer.
Dependencies are inferred from the claim text.