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US 2024/0194590 A1Published application
Interconnection structure and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorTSU-CHIEH AI
Life of this patent
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Abstract
An interconnection structure and a method of manufacturing an interconnection structure are provided. The interconnection structure includes a first dielectric layer, a first conductive via in the first dielectric layer, and a first metal line disposed on the first dielectric layer and electrically connected with the first conductive via. At least a portion of the first metal line is exposed to a first air gap.
Claims6
A method of manufacturing an interconnection structure, comprising:
- disposing a sacrificial layer on a first dielectric layer, wherein the sacrificial layer has an etching property different from the first dielectric layer;
- forming a trench in the first dielectric layer and the sacrificial layer;
- forming a first metal line in the trench;
- and
- removing the sacrificial layer from the first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.