Back to results
US 2024/0194589 A1Published application
Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Kuan LEE, Hai-Ching CHEN, Hsin-Yen HUANG, Shau-Lin SHUE, Cheng-Chin LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.
Claims20
A method of forming a semiconductor device, comprising:
- forming a first conductive feature;
- forming a first dielectric layer adjacent the first conductive feature;
- selectively forming a blocking layer on a top surface of the first conductive feature;
- forming an etch stop layer on a top surface of the first dielectric layer while the blocking layer is positioned on the top surface of the first conductive feature;
- removing the blocking layer;
- and
- forming a second dielectric layer over the etch stop layer and the first conductive feature after removing the blocking layer.
4 more elements
A method of forming a semiconductor device, comprising:
- forming a first conductive feature;
- forming a first dielectric layer adjacent the first conductive feature;
- forming an etch stop layer on a top surface of the first dielectric layer, wherein the etch stop layer does not overlie the first conductive feature;
- and
- forming a second dielectric layer over the etch stop layer and the first conductive feature.
2 more elements
A method of forming a semiconductor device, comprising:
- forming a first conductive feature;
- forming a first dielectric layer adjacent the first conductive feature;
- forming an etch stop layer on a top surface of the first dielectric layer;
- forming a cap layer over the etch stop layer;
- and
- forming a contact to contact a sidewall of the cap layer, a top surface of the etch stop layer, a sidewall of the etch stop layer;
- and a top surface of the first conductive feature.
4 more elements
Dependencies are inferred from the claim text.