Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a first semiconductor substrate comprising a first side and a second side opposite to the first side;
• a first interconnect structure disposed on the first side of the first semiconductor substrate;
• and
• a TSV extending from the first interconnect structure, through the first side of the first semiconductor substrate, and to the second side of the first semiconductor substrate;
• a first bonding conductor and a second bonding conductor disposed at two opposing sides of the TSV, the first bonding conductor electrically coupled to the TSV through the first interconnect structure, wherein an area of a surface of the TSV facing the second bonding conductor is greater than an area of a surface of the second bonding conductor facing the TSV.

A semiconductor structure, comprising:

• a semiconductor substrate comprising a first side and a second side opposite to the first side;
• an interconnect structure disposed below the semiconductor substrate;
• and
• a TSV penetrating through the first semiconductor substrate and extending into the first interconnect structure;
• and
• a bonding conductor disposed below and electrically connected to the first interconnect structure, wherein in a bottom view, an orthogonal projection of the bonding conductor overlaps an orthogonal projection of the TSV.