Capacitor networks for harmonic control in power devices

An integrated device, comprising:

• a power transistor formed on a first substrate;
• a capacitor network formed on a second substrate, the capacitor network comprising:
• a bond pad over a top side of the second substrate;
• and
• a plurality of metal-insulator-metal (MIM) capacitors positioned over the top side of the second substrate and along a plurality of different sides of the bond pad, wherein:
• a first metal layer of each of the plurality of MIM capacitors is electrically coupled to the bond pad;
• and
• a second metal layer of each of the plurality of MIM capacitors is electrically coupled to a ground plane on a bottom side of the second substrate by a through-substrate via;
• and
• at least one bond wire electrically coupled between the power transistor and the bond pad of the capacitor network.

A capacitor network, comprising

• a bond pad over a substrate;
• and
• a plurality of metal-insulator-metal (MIM) capacitors positioned over the substrate and along a plurality of different sides of the bond pad, wherein:
• a first metal layer of each of the plurality of MIM capacitors is electrically coupled to the bond pad;
• and
• a second metal layer of each of the plurality of MIM capacitors is electrically coupled to a ground plane.